Anomalous Electron Transport in Field-Effect Transistors with Titanium Ditelluride Semimetal Thin-Film Channels

摘要

We report on "graphene-like" mechanical exfoliation of thin films of titaniumditelluride and investigation of their electronic properties. The exfoliatedcrystalline TiTe2 films were used as the channel layers in the back-gatedfield-effect transistors fabricated with Ti/Al/Au metal contacts on SiO2/Sisubstrates. The room-temperature current-voltage characteristics revealedstrongly non-linear behavior with signatures of the source-drain thresholdvoltage similar to those observed in the charge-density-wave devices. Thedrain-current showed an unusual non-monotonic dependence on the gate biascharacterized by the presence of multiple peaks. The obtained results can bepotentially used for implementation of the non-Boolean logic gates.